技术参数

• Part Status Obsolete
• Transistor Type 5 PNP
• Voltage - Collector Emitter Breakdown (Max) 15V
• Frequency - Transition 5.5GHz
• Noise Figure (dB Typ @ f) 3.5dB @ 1GHz
• Gain -
• Power - Max 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 2V
• Current - Collector (Ic) (Max) 65mA
• Operating Temperature 175°C (TJ)
• Mounting Type Surface Mount
• Package / Case 16-VFQFN Exposed Pad
• Supplier Device Package 16-QFN (3x3)
• RoHS Status ROHS3 Compliant
• Moisture Sensitivity Level (MSL) 2 (1 Year)
• REACH Status REACH Unaffected
• ECCN EAR99
• HTSUS 8541.21.0095