技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 100V
• Current - Continuous Drain (Id) @ 25°C 2A (Ta)
• Rds On (Max) @ Id, Vgs 202mOhm @ 2A, 10V, 270mOhm @ 2A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 2.8nC @ 10V, 19.7nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 90pF @ 50V, 590pF @ 50V
• Power - Max 1.1W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-SMD, Flat Leads
• Supplier Device Package TSMT8
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095