技术参数

• Part Status Active
• Technology MOSFET (Metal Oxide)
• Configuration N and P-Channel
• FET Feature -
• Drain to Source Voltage (Vdss) 60V
• Current - Continuous Drain (Id) @ 25°C 3.5A (Ta), 4A (Ta)
• Rds On (Max) @ Id, Vgs 95mOhm @ 3.5A, 10V, 96mOhm @ 4A, 10V
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Gate Charge (Qg) (Max) @ Vgs 3.1nC @ 10V, 17.3nC @ 10V
• Input Capacitance (Ciss) (Max) @ Vds 135pF @ 30V, 850pF @ 30V
• Power - Max 2W (Ta)
• Operating Temperature 150°C (TJ)
• Grade -
• Qualification -
• Mounting Type Surface Mount
• Package / Case 8-SOIC (0.154", 3.90mm Width)
• Supplier Device Package 8-SOP
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.29.0095