技术参数

• Part Status Obsolete
• Transistor Type NPN
• Voltage - Collector Emitter Breakdown (Max) 12V
• Frequency - Transition 4.5GHz
• Noise Figure (dB Typ @ f) 1.3dB ~ 2.5dB @ 800MHz
• Gain 9dB ~ 12dB
• Power - Max 150mW
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 10mA, 10V
• Current - Collector (Ic) (Max) 30mA
• Operating Temperature 150°C (TJ)
• Mounting Type Surface Mount
• Package / Case SC-85
• Supplier Device Package SMini3-F2
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• ECCN EAR99
• HTSUS 8541.21.0075